METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

An object is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer exists in a peripheral portion, whereby the insulating layer is removed; and etching treatment is performed on the semiconductor substrate with the use of a mixed solution including a substance that oxidizes a semiconductor material included in the semiconductor substrate, a substance that dissolves the oxidized semiconductor material, and a substance that controls oxidation speed of the semiconductor material and dissolution speed of the oxidized semiconductor material, whereby the damaged semiconductor region is selectively removed with a non-damaged semiconductor region left.