发明名称 |
PLASMA PROCESSING EQUIPMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide plasma processing equipment capable of improving productivity by reducing minute foreign materials attached to an inner wall of a processing chamber. <P>SOLUTION: Plasma processing equipment comprises: a vacuum processing chamber of which interior is coated; a mounting electrode 102 disposed in the vacuum processing chamber, for holding a material to be processed in the vacuum processing chamber; a gas supply system 104 having a porous plate, for dispersively supplying a processing gas into the vacuum processing chamber; and exhaust means 105 for vacuum-evacuating the vacuum processing chamber. High-frequency power is supplied into the vacuum processing chamber to generate plasma therein to apply plasma processing to the material to be processed mounted on the mounting electrode. The plasma processing equipment comprises: the coating film containing a plasma-proof material; and a laser light source 123 for irradiating a spattered product of the coating film with a laser beam having a wavelength that a material forming the coating film absorbs. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012064773(A) |
申请公布日期 |
2012.03.29 |
申请号 |
JP20100208031 |
申请日期 |
2010.09.16 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
TAMURA SATOYUKI;SHIRAYONE SHIGERU;FURUSE MUNEO |
分类号 |
H01L21/3065;C23C16/44;H01L21/31;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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