| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce processing time of a heat treatment process of a substrate such as a semiconductor wafer. <P>SOLUTION: The heat treatment method includes a step in which a heated upper radiation plate is moved to a position opposed to the upper surface side of the substrate laid horizontally on a susceptor outside a heat treatment furnace, and a heated lower radiation plate is moved to a position opposed to the lower surface side of the substrate laid horizontally on the susceptor outside the heat treatment furnace; a step in which the upper radiation plate, the lower radiation plate, the susceptor, and the substrate are integrally loaded into the heat treatment furnace while maintaining the state in which the upper radiation plate and the lower radiation plate are opposed to the upper and lower surface sides, respectively; and a step in which the upper radiation plate, the lower radiation plate, the susceptor, and the substrate are integrally unloaded from the heat treatment furnace while maintaining the state in which the upper radiation plate and the lower radiation plate are opposed to the upper and lower surface sides, respectively. <P>COPYRIGHT: (C)2012,JPO&INPIT |
