MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY AND METHOD OF MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve the device characteristics of a magnetoresistance effect element.

SOLUTION: The magnetoresistance effect element includes a second magnetic layer 92 having magnetic anisotropy in the direction perpendicular to the film surface and an invariable orientation of magnetization, a first magnetic layer 91 having magnetic anisotropy in the direction perpendicular to the film surface and a variable orientation of magnetization, and a nonmagnetic layer 93 provided between the first and second magnetic layers 91, 92. The first magnetic layer 91 has a magnetization film 21 containing at least one element selected from a first group consisting of Tb, Gd and Dy, and at least one element selected from a second group consisting of Co and Fe. The magnetization film 21 contains an amorphous phase 29 and a crystal 28 having a particle size of 1 nm or less.

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