| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which reduce contact resistance. <P>SOLUTION: The semiconductor device of the embodiment includes a nickel silicide film 18 formed at a bottom 14 of a contact hole 12 formed on an interlayer insulation film 11 on a semiconductor substrate 10 containing silicon and connected with a contact plug 21 formed at the contact hole 12. A boundary face 18a between the nickel silicide film 18 and the contact plug 21 is higher than a boundary face 10a between the semiconductor substrate 10 and the interlayer insulator film 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012064882(A) |
申请公布日期 |
2012.03.29 |
| 申请号 |
JP20100209745 |
申请日期 |
2010.09.17 |
| 申请人 |
TOSHIBA CORP |
发明人 |
HONDA AKIRA;KITAMURA MASAYUKI |
| 分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L21/768 |
主分类号 |
H01L23/52 |
| 代理机构 |
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