发明名称 |
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME |
摘要 |
An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
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申请公布号 |
US2012077301(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US201113239457 |
申请日期 |
2011.09.22 |
申请人 |
AHN YU-JIN;LEE DUCK-HYUNG;SHIN JONG-CHEOL;MOON CHANG-ROK;CHOI SANG-JUN;PARK EUN-KYUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN YU-JIN;LEE DUCK-HYUNG;SHIN JONG-CHEOL;MOON CHANG-ROK;CHOI SANG-JUN;PARK EUN-KYUNG |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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