THIN FILM TRANSISTOR ARRAY DEVICE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY DEVICE

摘要

A thin film transistor array device (20) is provided with bottom gate-type first and second transistors, and source wiring (22) is disposed on a passivation film, which is a layer different from a first source electrode (42) included in the first transistor, and the source wiring is electrically connected to the first source electrode (42) via a second hole provided in the passivation film. A conductive oxide film laminated on the passivation film covers an end portion of gate wiring (21), said end portion being exposed from the opening, and the conductive oxide film is formed between the passivation film and the source wiring (22), and between the passivation film and a relay electrode (55), and is not electrically connected between the source wiring (22) and the relay electrode (55). The conductive oxide film is formed between the relay electrode (55) and a source electrode (53), and electrically connects the relay electrode (55) and the source electrode (53) to each other. The relay electrode (55) is formed in the same layer where the source wiring (22) on the passivation film is formed, and the relay electrode is composed of the material same as that of the source wiring (22).