发明名称 BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGN AND CORRESPONDING PATTERNING PROCESSES
摘要 Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.
申请公布号 KR20120031004(A) 申请公布日期 2012.03.29
申请号 KR20117029040 申请日期 2010.05.13
申请人 NANOGRAM CORPORATION 发明人 SRINIVASAN UMA;ZHOU XIN;HIESLMAIR HENRY;PAKALA NEERAJ
分类号 H01L31/042;H01L31/0224;H01L31/18 主分类号 H01L31/042
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