| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device and a manufacturing method therefor, capable of suppressing a voltage drop at the central portion of a pixel region. <P>SOLUTION: A solid-state imaging device 1 having a pixel region 61 of a plurality of two-dimensionally arrayed pixel portions 100 comprises: a semiconductor substrate 5; interlayer insulating films 20-22 formed on the semiconductor substrate 5; a lower electrode 40 formed on the interlayer insulating films 20-22; a photoelectric conversion film 41 formed on the lower electrode 40; and an upper electrode 42 having light transmissivity, formed on the photoelectric conversion film 41. The upper electrode 42 is expanded over the entire pixel region 61. Further, on at least a portion of the upper electrode 42, there is a lamination of metallic wiring 45 passing between adjacent pixel portions 100 and being formed of a material having smaller electrical resistivity than a material constituting the upper electrode 42. <P>COPYRIGHT: (C)2012,JPO&INPIT |
