| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving both low on-resistance and high breakdown tolerance. <P>SOLUTION: A semiconductor device comprises a first main electrode, a first semiconductor layer, a first-conductive-type base layer, a second-conductive-type base layer, a second semiconductor layer of a first conductive type, buried layers of a second conductive type, buried electrodes, gate insulating films, gate electrodes, and a second main electrode. The buried layers are selectively provided in the first-conductive-type base layer. The buried electrodes are provided on the bottoms of trenches penetrating through the second-conductive-type base layer and reaching the buried layers, and contact the buried layers. The gate insulating films are provided on the side surfaces of the trenches located on the buried electrodes. The gate electrodes are provided within the gate insulating films in the trenches. The second main electrode is provided on the second semiconductor layer and is electrically connected to the second semiconductor layer and the buried electrodes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
