| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor substrate by filling a trench with an epitaxial film in which the blocking of the trench opening is minimized while enhancing the growth rate. <P>SOLUTION: On an n-type epitaxial film 2 formed on an n<SP POS="POST">+</SP>silicon substrate 1, a plurality of trenches 4 are formed so that the interval Lt between adjoining trenches 4 is larger than the trench width Wt. On the epitaxial film 2 including the interior of the trench 4, a p-type epitaxial film 23 having a concentration higher than the impurity concentration of the epitaxial film 2 is deposited, at least in the final process of filling the trench 4, using a mixture gas of silicon source gas and a halide gas as the gas supplied for deposition of the p-type epitaxial film 23, and then the interior of the trench 4 is filled with the p-type epitaxial film 23. <P>COPYRIGHT: (C)2012,JPO&INPIT |
