| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress increase in parasitic capacitance by easily controlling spread of a resist. <P>SOLUTION: A method of manufacturing a thin-film transistor substrate comprises the steps of: depositing a gate insulating film 12, a first semiconductor film 13, a second semiconductor film 14, and a metal layer on a gate electrode 11aa and then forming a resist on a metal film; forming a source drain formation layer 15a by etching the metal film exposed from the resist and an upper portion of the metal film disposed in a lower portion of a thin-film portion of the resist; deforming a resist Rbb to a resist Rbc by reflow treatment based on a temperature difference between the source drain formation layer 15a exposed from the resist Rbb and the second semiconductor film 14; forming a first semiconductor layer 13a and a second semiconductor layer formation layer 14a using the resist Rbc; and forming a source electrode and a drain electrode after removing the resist Rbc, and then forming a second semiconductor layer 14b by etching the second semiconductor layer formation layer 14a exposing from both the electrodes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
