发明名称 |
DEVICE WITH THROUGH-SILICON VIA (TSV) AND METHOD OF FORMING THE SAME |
摘要 |
A device with through-silicon via (TSV) and a method of forming the same includes the formation of an opening in a silicon substrate, the formation of a first insulation layer on the sidewalls and bottom of the opening, the formation of a second insulation layer on the sidewalls and bottom of the opening. A first interface between the first insulation layer and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm. A second interface between the second insulation layer and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm. |
申请公布号 |
US2012074582(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US20100892409 |
申请日期 |
2010.09.28 |
申请人 |
YU CHEN-HUA;CHIOU WEN-CHIH;LIAO EBIN;WU TSANG-JIUH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU CHEN-HUA;CHIOU WEN-CHIH;LIAO EBIN;WU TSANG-JIUH |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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