METHOD OF DEPOSITING A LAYER OF A MATERIAL ON A SUBSTRATE

摘要

Method for the deposition of a layer (4d) of (BaxSr1-x) TiO3 (BST), wherein 0 < x < 1, on a surface (4') of a sapphire substrate heated to a temperature between 400 °C and 800 °C is reported; the deposition is carried out using a device (2) for pulsed plasma generation, which directs a flow of electrons at a target (3) of BST so that at least part of the BST is emitted from the target (3) and deposited on the substrate (4); the substrate (4) has the 0001 hexagonal plane substantially parallel to the deposition surface (4'); in this way the epitaxial growth of BST on the substrate (4) is obtained.