| 摘要 |
SILICON WAFER AND PRODUCTION METHOD THEREOFA silicon wafer comprising: a silicon substrate;a first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentration is set to equal or more than 1x10[err] atoms/cm³; anda second epitaxial layer laid on the first epitaxial layer,whose conductivity type is the same as for said first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentration is set to equal or less than 5x10[err] atoms/cm³;wherein, by doping a lattice constant adjusting material intothe first epitaxial layer, the variation amount ((a[err] - a[err]) / a[err]) of the lattice constant of the first epitaxial layer (a[err]) relative to the lattice constant of the silicon single crystal (a[err]) as well as the variation amount ((a[err] - a[err]) / a[err]) of thelattice constant of the second epitaxial layer (a[err]) relative to (a[err]) are controlled less than the critical lattice mismatches. Fig. 1a
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