| 摘要 |
Compositions and methods for depositing elemental metal M(0) films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing a metal precursor, an excess amount of neutral labile ligands, and a supercritical solvent; exposing the metal precursor to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; reducing the metal precursor to the elemental metal M(0) by using the reducing agent and/or the thermal energy; and depositing the elemental metal M(0) film while minimizing formation of metal oxides.No Figure
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