| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal film having a necessary work function and oxidation resistance at low cost. <P>SOLUTION: This method for manufacturing a semiconductor device includes the steps of: carrying in a substrate into a treatment container; performing treatment of forming a metal film with a predetermined film thickness on the substrate by supplying and exhausting processing gas into and from the treatment container; and taking out the processed substrate from the treatment container. In the step of performing treatment, during forming the metal film or after forming the metal film, oxygen-containing gas and/or nitrogen-containing gas is activated with heat or plasma, and supplied and exhausted into and from the treatment container, thereby a bottom face or surface of the metal film is modified into a conductive metal oxide layer, a conductive metal nitride layer or a conductive metal oxynitride layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
