| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with an anti-fuse element suppressing the area. <P>SOLUTION: A semiconductor device includes a substrate 10, a first insulation film 11, a conductive film 12 including a silicide film 12b, and a contact 15. The first insulation film 11 is formed on the substrate 10. The conductive film 12 is formed on the first insulation film 11. The contact 15 is formed on the substrate 10, is disposed adjacent to the conductive film 12 and a second insulation film 14 and is short-circuited to the silicide film 12b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
