| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a diode that allows a core to have a desired characteristic without increasing manufacturing cost and decreasing manufacturing yield. <P>SOLUTION: A light-emitting diode 5 comprises: a bar-shaped core 1 made from SiC; a first shell 2 made from n-type GaN; and a second shell 3 made from p-type GaN. Because the first n-type shell 2 and the second p-type shell 3 act as two poles of the diode, SiC which is different from the materials of the first shell 2 and the second shell 3 can be chosen as the material for the core 1. Because the refraction index of the bar-shaped core 1 (3-3.5) is greater than the refraction index of the first shell 2 (2.5), light generated on a pn junction interface between the first shell 2 and the second shell 3 easily enters the inside of the bar-shaped core 1 from the first shell 2, and the light entered in the inside of the bar-shaped core 1 is easily subject to total reflection on the interface between the bar-shaped core 1 and the first shell 2. Accordingly, the light generated is guided to the core 1, and results in high-intensity emission in the core 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
