| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device manufacturing method which can form a sufficient amount of silicide while inhibiting defects in a silicide step. <P>SOLUTION: The nonvolatile semiconductor storage device manufacturing method comprises the steps of: forming a memory cell transistor including a floating gate electrode, a first interelectrode insulator film on the floating gate electrode and a control gate electrode on the first interelectrode insulator film; forming a field effect transistor including a lower gate electrode, a second interelectrode insulator film and an upper gate electrode on the second interelectrode insulator film; forming an interlayer insulator film so as to expose top faces of the control gate electrode and the upper gate electrode; etch-backing the control gate electrode and the upper gate electrode such that the top faces of the control gate electrode and the upper gate electrode become lower than a top face of the interlayer insulator film; forming a first conductive film on the whole area of the control gate electrode, the upper gate electrode and the interlayer insulator film; etch-backing the first interlayer insulator film; and silicidating the control gate electrode, the upper gate electrode and the first conductive film by depositing metal thereon. <P>COPYRIGHT: (C)2012,JPO&INPIT |
