发明名称 |
CONDUCTIVE OXIDE LAYER CRYSTAL-ORIENTED ON AMORPHOUS BASE MATERIAL AND FORMATION METHOD OF THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a base body having a conductive oxide layer of LaNiO<SB POS="POST">3</SB>, La<SB POS="POST">2</SB>NiO<SB POS="POST">4</SB>or SrRuO<SB POS="POST">3</SB>or the like which is crystalline with excellent orientation on an amorphous base material. <P>SOLUTION: In the method of forming a crystalline La-Ni-O-based material layer on the amorphous base material, a first layer of an La-Ni-O-based material is formed at a first temperature on the amorphous base material, then a second layer of the La-Ni-O-based material is formed on the first layer of the La-Ni-O-based material under a second temperature condition higher than the first temperature, wherein the crystal orientation of the second layer of the La-Ni-O-based material is higher than that of the first layer of the La-Ni-O-based material. The conductive oxide layer of SrRuO<SB POS="POST">3</SB>or the like can be provided on the La-Ni-O-based material. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012062529(A) |
申请公布日期 |
2012.03.29 |
申请号 |
JP20100207905 |
申请日期 |
2010.09.16 |
申请人 |
TOKYO INSTITUTE OF TECHNOLOGY;FURUUCHI KAGAKU KK |
发明人 |
FUNAKUBO HIROSHI;YAMADA TOMOAKI;MATSUSHIMA MASAAKI;HOSOKAWA TADATOSHI;YAMAMOTO SATOSHI |
分类号 |
C23C14/06;C01G53/00;C01G55/00 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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