发明名称 SEMICONDUCTOR SUBSTRATE CUTTING METHOD
摘要 A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.
申请公布号 US2012077315(A1) 申请公布日期 2012.03.29
申请号 US201113269274 申请日期 2011.10.07
申请人 FUKUMITSU KENSHI;FUKUYO FUMITSUGU;UCHIYAMA NAOKI;SUGIURA RYUJI;ATSUMI KAZUHIRO;HAMAMATSU PHOTONICS K.K. 发明人 FUKUMITSU KENSHI;FUKUYO FUMITSUGU;UCHIYAMA NAOKI;SUGIURA RYUJI;ATSUMI KAZUHIRO
分类号 H01L21/301;H01L21/50;B23K26/08;B23K26/10;B23K26/40 主分类号 H01L21/301
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