发明名称 SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME
摘要 One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.
申请公布号 US2012074574(A1) 申请公布日期 2012.03.29
申请号 US20100893009 申请日期 2010.09.29
申请人 BARTH HANS-JOACHIM;BEER GOTTFRIED;PLAGMANN JOERN;POHL JENS;ROBL WERNER;STEINER RAINER;VAUPEL MATHIAS 发明人 BARTH HANS-JOACHIM;BEER GOTTFRIED;PLAGMANN JOERN;POHL JENS;ROBL WERNER;STEINER RAINER;VAUPEL MATHIAS
分类号 H01L21/768;H01L23/532 主分类号 H01L21/768
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