| 摘要 |
The present invention discloses a vertical zener diode structure, in which a deep N-sinker region and a P-implantation region of the zener diode are formed in an N-well within an epitaxial layer; the P-implantation region is closer to a silicon surface than the deep N-sinker region in a vertical direction. In this structure, as zener breakdown occurs at a position away from the silicon surface, the problem of a drift in the zener breakdown value can be improved. The present invention also discloses a manufacturing method of a vertical zener diode. |
