发明名称 THIN-FILM SEMICONDUCTOR CRYSTALLINITY EVALUATION APPARATUS, USING ?-PCD METHOD
摘要 <p>In a crystallinity evaluation apparatus (1) and a crystallinity evaluation method for thin-film semiconductors, of the present invention, excitation light and an electromagnetic wave are radiated upon a measuring portion of a sample (2) of a thin-film semiconductor (2a), and crystallinity of the sample (2) is evaluated by detecting the intensity of the reflection electromagnetic wave from the sample (2). The thin-film semiconductor (2a) of the sample (2) is formed upon a conductive film (2b), and further, a dielectric (3) that shows permeability to excitation light is arranged between the sample (2) and a waveguide (13) from which the electromagnetic wave is to be radiated. With a thin-film semiconductor crystallinity evaluation apparatus (1) and a method therefor that are configured in such a way, crystallinity can be evaluated even when a conductive film (2b) is formed under the thin-film semiconductor (2a), as mentioned above.</p>
申请公布号 WO2012039099(A1) 申请公布日期 2012.03.29
申请号 WO2011JP04911 申请日期 2011.09.01
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE, INC.;SAKODA, NAOKAZU;TAKAMATSU, HIROYUKI;INUI, MASAHIRO;OJIMA, FUTOSHI 发明人 SAKODA, NAOKAZU;TAKAMATSU, HIROYUKI;INUI, MASAHIRO;OJIMA, FUTOSHI
分类号 H01L21/66 主分类号 H01L21/66
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