发明名称 |
THIN-FILM SEMICONDUCTOR CRYSTALLINITY EVALUATION APPARATUS, USING ?-PCD METHOD |
摘要 |
<p>In a crystallinity evaluation apparatus (1) and a crystallinity evaluation method for thin-film semiconductors, of the present invention, excitation light and an electromagnetic wave are radiated upon a measuring portion of a sample (2) of a thin-film semiconductor (2a), and crystallinity of the sample (2) is evaluated by detecting the intensity of the reflection electromagnetic wave from the sample (2). The thin-film semiconductor (2a) of the sample (2) is formed upon a conductive film (2b), and further, a dielectric (3) that shows permeability to excitation light is arranged between the sample (2) and a waveguide (13) from which the electromagnetic wave is to be radiated. With a thin-film semiconductor crystallinity evaluation apparatus (1) and a method therefor that are configured in such a way, crystallinity can be evaluated even when a conductive film (2b) is formed under the thin-film semiconductor (2a), as mentioned above.</p> |
申请公布号 |
WO2012039099(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
WO2011JP04911 |
申请日期 |
2011.09.01 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE, INC.;SAKODA, NAOKAZU;TAKAMATSU, HIROYUKI;INUI, MASAHIRO;OJIMA, FUTOSHI |
发明人 |
SAKODA, NAOKAZU;TAKAMATSU, HIROYUKI;INUI, MASAHIRO;OJIMA, FUTOSHI |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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