发明名称 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device having high conversion efficiency in which occurrence of surface plasmon absorption is reduced in a back electrode layer. <P>SOLUTION: In the method of manufacturing a photoelectric conversion device 100 where a first transparent electrode layer 2, a photoelectric conversion layer 3, a second transparent electrode layer 5, and a back electrode layer 4 consisting of a metal film are laminated sequentially on a substrate 1, the second transparent electrode layer 5 is formed by sputtering in a film deposition chamber where the partial water vapor pressure is controlled below 0.6%. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012064723(A) 申请公布日期 2012.03.29
申请号 JP20100207108 申请日期 2010.09.15
申请人 MITSUBISHI HEAVY IND LTD 发明人 WATANABE TOSHIYA;SAKAI TOMOTSUGU;ASAHARA YUJI
分类号 H01L31/04 主分类号 H01L31/04
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