| 摘要 |
<p>The invention provides a chemical-mechanical polishing system comprising a water-soluble silicate compound, an oxidizing agent that oxidizes at least a part of a substrate,water, and a polishing pad, wherein the polishing system is substantially free of abrasiveparticles. The invention further provides a method of chemically-mechanically polishinga substrate with the aforementioned polishing system. The polishing system isparticularly useful in the removal of tantalum.No Figure</p> |
