| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with higher efficiency for extracting light from a semiconductor light-emitting element, and a manufacturing method of the semiconductor light-emitting device. <P>SOLUTION: A semiconductor light-emitting device 1 comprises a semiconductor light-emitting element 10 for emitting light, and a sub-mount 15 serving as wiring for supplying power to the semiconductor light-emitting element 10 and provided with reflection layers 21 and 24 for reflecting the wavelength of light emitted from the semiconductor light-emitting element 10. In the semiconductor light-emitting element 10, an intermediate layer 120, a base layer 130, a multilayer semiconductor layer 100, and a light-transmitting electrode 170 are stacked sequentially on a light-transmitting substrate 110. Since the light-transmitting electrode 170 and the reflection layers 21 and 24 of the sub-mount 15 in the semiconductor light-emitting element 10 face each other with a distance therebetween, the light emitted from the semiconductor light-emitting element 10 toward the light-transmitting electrode 170 can be reflected efficiently and extracted out of the semiconductor light-emitting element 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
