发明名称 HIGH-PURITY TRIALKYL INDIUM, AND ITS PRODUCTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide high-purity trialkyl indium obtained by a simple method, and to provide the method. <P>SOLUTION: In this high-purity trialkyl indium, the content of silicon atom is &le;0.3 mass ppm, the content of oxygen atom is &le;5.0 mass ppm, and the content of hydrocarbon compounds is &le;50 mass ppm. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012062331(A) 申请公布日期 2012.03.29
申请号 JP20110285169 申请日期 2011.12.27
申请人 UBE INDUSTRIES LTD 发明人 NOGUCHI HIDETAKA;ISHICHI KOJI;MONOBE HIROYUKI;MATSUSHIGE KENJI
分类号 C07F5/00 主分类号 C07F5/00
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