| 摘要 |
Provided are a substrate processing apparatus, a gas nozzle, and a method of processing a substrate, which is capable of improving heating efficiency of a gas without increasing a size of a reaction container. A gas supply nozzle 300 includes a first extension part 321, a third extension part 323, and a fifth extension part 325, which extend in a circumferential direction of wafers 200, and the first extension part 321, a second extension part 322, a fourth extension part 324, and a sixth extension part 326, which extend in a stacking direction of the wafers 200. The gas supply nozzle 300 may be disposed in a gap between an outer tube and an inner tube to save a space without increasing a size of a processing furnace as in the art. By increasing a gas circulation path of the gas supply nozzle 300, a gas in the gas supply nozzle 300 can be sufficiently heated due to radiant heat of each susceptor 218. As a result, the heating efficiency of the gas can be improved and thus, the occurrence of slip or haze on each of the wafers 200 can be suppressed. |
