| 摘要 |
According to an embodiment, a semiconductor device includes a first trench being provided in an N+ substrate. An N layer, an N− layer, a P layer, and an N+ layer are formed in a stacked manner to cover the first trench. The semiconductor device includes second and third trenches. The P+ layer is formed to cover the second trench. The trench gates are formed to cover the third trenches. |
