| 摘要 |
<p>The present invention provides a gas-barrier film which comprises a base layer and a gas-barrier layer formed on at least one surface of the base layer, wherein the base layer comprises a resin having a glass transition temperature (Tg) exceeding 130ºC and the gas-barrier layer is constituted of a material containing at least oxygen and silicon atoms and has a surface-layer part in which the proportions of oxygen atoms, nitrogen atoms, and silicon atoms in all the oxygen atoms, nitrogen atoms, and silicon atoms are 60-75%, 0-10%, and 25-35%, respectively, and which has a film density of 2.4-4.0 g/cm3. Also provided are a process for producing the gas-barrier film, a member for electronic devices which comprises the gas-barrier film, and an electronic device equipped with the member for electronic devices. According to the present invention, the gas-barrier film is excellent in terms of all of gas-barrier properties, transparency, flex resistance, and heat resistance.</p> |
