| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device is provided to prevent a false elimination of an unselected memory block by not applying high voltage to a charge storage layer of a memory transistor. CONSTITUTION: A plurality of memory blocks includes a plurality of cell units. The cell unit comprises a memory string, a first transistor, a second transistor, and a diode. One end of the first transistor is connected to one end part of the memory string. The second transistor is installed between the other end part of the memory string and a second wiring. A diode layer(50) comprises a first conductivity type second semiconductor layer(52), and a second conductivity type third semiconductor layer(53). The first conductivity type second semiconductor layer is vertically extended with respect to a substrate. The second conductivity type third semiconductor layer is arranged on the upper surface of the second semiconductor layer and vertically extended with respect to the substrate. |
