发明名称 CRYSTAL SILICON BASED SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a crystal silicon solar cell having excellent photoelectric conversion efficiency and enhanced productivity by decreasing the electric resistance of a collector electrode thereby reducing resistance loss of the collector electrode in a photovoltaic device using a single crystal silicon substrate. <P>SOLUTION: The crystal silicon solar cell comprises intrinsic silicon based thin film layer, and a p-type silicon based thin film layer in this order on one side of a single crystal silicon substrate, and has a substantially intrinsic silicon based thin film layer, and an n-type silicon based thin film layer in this order on the other side. The single crystal silicon substrate has a texture structure on the surface thereof, and the texture structure has different heights at a light-receiving part on the light incident surface side and at a collector electrode. The height is 3-15 &mu;m at the light-receiving part, and 0.1-0.5 &mu;m at the collector electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012064839(A) 申请公布日期 2012.03.29
申请号 JP20100209045 申请日期 2010.09.17
申请人 KANEKA CORP 发明人 KOIZUMI GENSUKE;INAGI OSAMU;YAMAMOTO KENJI
分类号 H01L31/04 主分类号 H01L31/04
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