发明名称 HIGH-THROUGHPUT BATCH POROUS SILICON MANUFACTURING EQUIPMENT DESIGN AND PROCESSING METHODS
摘要 <p>This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.</p>
申请公布号 WO2012040688(A2) 申请公布日期 2012.03.29
申请号 WO2011US53183 申请日期 2011.09.24
申请人 SOLEXEL, INC.;YONEHARA, TAKAO;TAMILMANI, SUBRAMANIAN;KRAMER, KARL-JOSEF;ASHJAEE, JAY;MOSLEHI, MEHRDAD, M.;MIYAJI, YASUHIRO;HAYASHI, TOKUYUKI;INAHARA, TAKAMITSU 发明人 YONEHARA, TAKAO;TAMILMANI, SUBRAMANIAN;KRAMER, KARL-JOSEF;ASHJAEE, JAY;MOSLEHI, MEHRDAD, M.;MIYAJI, YASUHIRO;HAYASHI, TOKUYUKI;INAHARA, TAKAMITSU
分类号 H01L21/306 主分类号 H01L21/306
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