| 摘要 |
<p>Ineffective chips (22) are formed at the periphery of a semiconductor wafer (1), effective chips (21) are formed in a region surrounded by the ineffective chips, surface electrodes are formed on the effective chips and the ineffective chips, and insulating films (7) are disposed on dicing lines (23) that define the effective chips and the ineffective chips. A polyimide (26) is formed with a predetermined width from the outer circumferential end of the semiconductor wafer, said polyimide covering the outer circumferential portion of the semiconductor wafer, such that the polyimide continuously covers the ineffective chips from the outer circumferential end of the semiconductor wafer toward the inside, and that the polyimide also continuously covers a portion, which is on the dicing line sandwiched between the ineffective chips, and which is at a predetermined distance from the outer circumferential end of the semiconductor wafer with respect to the effective chips. The surface electrodes formed on the effective chips are plated with metal films, and the semiconductor wafer is cut along the dicing lines with a blade into semiconductor chips.</p> |
