| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve resistance against electrostatic discharge by preventing local current concentration at a drain end. <P>SOLUTION: On the upper surface of an N type high concentration embedding region 102, an N-type low concentration region 103, an N-type well region 104, and an N-type high concentration embedding contact region 105 are sequentially arranged to adjoin each other. A P-type low concentration region 106 is arranged on the upper surface of the N-type low concentration region 103. A first N-type high concentration region 107 to which a drain electrode 113D is connected is arranged on the upper surface of the N-type high concentration embedding contact region 105. A P type high concentration region 109 and a second N-type high concentration region 108 to which a source electrode 113S is connected are arranged side by side in channel width direction on the upper surface of the P-type low concentration region 106. An element separation region 110 is arranged from the first N-type high concentration region 107 toward the upper surface of the P-type low concentration region 106 by way of the upper surface of the N-type well region 104. A gate electrode 111 is arranged on an upper surface corresponding to the upper surface of the P-type low concentration region 106 by way of a gate oxide film. Thus, a channel is formed at the lower part of the gate electrode 111 in the P-type low concentration region 106. <P>COPYRIGHT: (C)2012,JPO&INPIT |
