| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure capable of easily ensuring reliability of the device by assuring long-term reliability of a gate insulating film, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device 1 comprises: an n-type epitaxial layer 8, p-type body regions 12 formed in a surface portion of the epitaxial layer 8; n-type source regions 15 formed in surface portions of the body regions 12; a gate insulating film 19 formed on the epitaxial layer 8; and gate electrodes 20 formed on the gate insulating film 19. The gate insulating film 19 contains nitride atoms therein, and includes first portions 191 contacting the epitaxial layer 8 outside the body regions 12, second portions 192 contacting the body regions 12, and third portions 193 contacting the source regions 15. The film thickness T3 of the third portions 193 of the gate insulating film 19 is thicker than the film thickness T1 of the first portions 191 and the film thickness T2 of the second portions 192. <P>COPYRIGHT: (C)2012,JPO&INPIT |
