| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor which can form a capacitive insulating film having a high-temperature phase crystal structure on an electrode directly. <P>SOLUTION: A method of manufacturing a capacitor Cap includes: a step of forming a first electrode 3; a step of forming a metal oxide made of an amorphous phase on the first electrode 3 at a first temperature lower than a film formation temperature of a low-temperature phase crystal structure, the metal oxide being capable of forming the amorphous phase, the low-temperature phase crystal structure, and a high-temperature phase crystal structure in an ascending order of the film formation temperature; a step of depositing the high-temperature phase crystal structure on the metal oxide to obtain a capacitive insulating film 4 by rising the temperature from the first temperature to a second temperature equal to a film formation temperature of the high-temperature phase crystal structure at a temperature rising speed of 10°C/second or more and annealing the metal oxide at the second temperature; and a step of forming a second electrode 5 on the capacitive insulating film 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
