| 摘要 |
#CMT# #/CMT# The circuit has an anti-blooming circuit formed of p channel metal oxide semiconductor field effect transistor, comparison unit (8) and feedback current applying unit (9) connected between an input (E1) and an output (S1) of capacitive transimpedence amplifier (3). The comparison unit compares an output voltage (V-S1) of the amplifier to a set point voltage (V-AB) defined from an output voltage (V-S2) of another capacitive transimpedence amplifier (5). The application unit applies feedback current to the input when a difference between the output and set point voltages reaches a limit value. #CMT# : #/CMT# An independent claim is also included for a method for reading a detection circuit. #CMT#USE : #/CMT# Correlated double sampling detection circuit. #CMT#ADVANTAGE : #/CMT# The circuit enables correcting anti-blooming phenomenon, and can be easily utilized. The design of the circuit ensures reliable and repeatable production for industrial integration. The set point voltage is defined by the output voltage of the transimpedence amplifier to avoid introduction of additional polarization line, so that the detection circuit is compact. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of a correlated double sampling detection circuit and an anti-blooming module. C-DS : Sampling capacitor E1 : Input V-AB : Set point voltage V-S1, V-S2 : Output voltages of capacitive transimpedence amplifiers S1 : Output 3, 5 : Capacitive transimpedence amplifiers 8 : Comparison unit 9 : Feedback current applying unit. |
