| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which accelerates writing speed. <P>SOLUTION: A nonvolatile semiconductor storage device 110 comprises a memory part MC1 including a base semiconductor layer 10a, an electrode 70a, a channel semiconductor layer 30a, a base tunnel insulation film 20a, a channel tunnel insulation film 40a, a charge retention layer 50a and a block insulation film 60a. The channel semiconductor layer 30a is provided between the base semiconductor layer 10a and the electrode 70a and includes a channel part 31a facing the electrode 70a. The base tunnel insulation film 20a is provided between the base semiconductor layer 10a and the channel semiconductor layer 30a. The channel tunnel insulation film 40a is provided between the electrode 70a and the channel part 31a. The charge retention layer 50a is provided between the electrode 70a and the channel tunnel insulation film 40a and retains an electric charge. The block insulation film 60a is provided between the electrode 70a and the charge retention layer 50a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
