| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device provided with a variable resistive element capable of performing stable rewrite operation by reducing variance of resistance values of storage data due to switching operation of several times. <P>SOLUTION: The semiconductor storage device has a circuit which can apply a reforming voltage pulse for returning each resistive state of a variable resistive element with a deteriorated switching characteristic to an initial resistive state to a memory cell including the variable resistive element whose switching element deteriorates to make a reading margin small as a result of applying a rewriting voltage pulse of several times. The semiconductor storage device is achieved, which suppresses a deterioration in a reading margin by repairing a fluctuation from the initial resistive state about at least one resistive state of the variable resistive element with the application of the reforming voltage pulse and recovering a switching characteristic. <P>COPYRIGHT: (C)2012,JPO&INPIT |
