摘要 |
A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented. |
申请人 |
ON SEMICONDUCTOR TRADING, LTD.;SHIBASAKI, TAKASHI;SAITO, HIDEFUMI;MAKINO, TAKAHISA;SHIMIZU, MASANORI;SASAKI, DAISUKE |
发明人 |
SHIBASAKI, TAKASHI;SAITO, HIDEFUMI;MAKINO, TAKAHISA;SHIMIZU, MASANORI;SASAKI, DAISUKE |