发明名称 CIRCUIT DEVICE
摘要 A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented.
申请公布号 WO2012039116(A1) 申请公布日期 2012.03.29
申请号 WO2011JP05211 申请日期 2011.09.15
申请人 ON SEMICONDUCTOR TRADING, LTD.;SHIBASAKI, TAKASHI;SAITO, HIDEFUMI;MAKINO, TAKAHISA;SHIMIZU, MASANORI;SASAKI, DAISUKE 发明人 SHIBASAKI, TAKASHI;SAITO, HIDEFUMI;MAKINO, TAKAHISA;SHIMIZU, MASANORI;SASAKI, DAISUKE
分类号 H01L25/07;H01L23/36;H01L25/18;H02M3/155;H02M7/48 主分类号 H01L25/07
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