发明名称 |
LOW DIELECTRIC CONSTANT MATERIAL |
摘要 |
The present disclosure provides a dielectric material including a low dielectric constant material and an additive. The additive includes a compound having a Si—X—Si bridge, where X is a number of carbon atoms between 1 and 8. The additive may include terminal Si—CH3 groups. The dielectric material including the additive may be used as an inter-layer dielectric (ILD) layer of a semiconductor device. The dielectric material including the additive may be formed using a CVD or sol-gel process. One example of the additive is bis(triethoxysilyl)ethene. |
申请公布号 |
US2012074535(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US20100893374 |
申请日期 |
2010.09.29 |
申请人 |
HUANG HSIN-YEN;LO CHING-YU;CHEN HAI-CHING;BAO TIEN-I;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
HUANG HSIN-YEN;LO CHING-YU;CHEN HAI-CHING;BAO TIEN-I |
分类号 |
H01L29/06;C09D183/06;H01L21/31 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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