发明名称 |
WHITE LIGHT EMITTING DIODE |
摘要 |
A white light emitting diode (LED) and method for forming the white LED are provided, wherein a semiconductor material is formed directly with a epitaxial method on a GaN epitaxial structure. The semiconductor material is a doped II-VI semiconductor compound with a broad FWHM (Full Width at Half Maximum) compared to conventional phosphor, can provide a white LED with better color rendering. |
申请公布号 |
US2012074380(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US201113246032 |
申请日期 |
2011.09.27 |
申请人 |
WANG JYH-SHYANG;CHEN WEI-JIE;LO WEI-HSUAN;CHEN REN-HAO;CHUNG YUAN CHRISTIAN UNIVERSITY |
发明人 |
WANG JYH-SHYANG;CHEN WEI-JIE;LO WEI-HSUAN;CHEN REN-HAO |
分类号 |
H01L33/04;H01L33/28 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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