发明名称 |
FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING SAME |
摘要 |
For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co 2 FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co 2 FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co 2 FeAl having a smallest a though not a half-metal. |
申请公布号 |
EP2434556(A1) |
申请公布日期 |
2012.03.28 |
申请号 |
EP20100777669 |
申请日期 |
2010.05.07 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
INOMATA KOICHIRO;WANG WENHONG;SUKEGAWA HIROAKI |
分类号 |
H01L43/08;G01R33/09;G11B5/39;H01F10/16;H01F10/193;H01F10/32;H01L21/8246;H01L27/105;H01L43/10 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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