LOW-GIDL MOSFET STRUCTURE AND METHOD FOR FABRICATION
摘要
A low-GIDL current MOSFET device structure and a method of fabrication thereof which provides a low-GIDL current. The MOSFET device structure contains a central gate conductor whose edges may slightly overlap the source/drain diffusions, and left and right side wing gate conductors which are separated from the central gate conductor by a thin insulating and diffusion barrier layer.
申请公布号
EP1588403(B1)
申请公布日期
2012.03.28
申请号
EP20040702490
申请日期
2004.01.15
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
RADENS, CARL;DOKUMACI, OMER, H.;DORIS, BRUCE, B.;GLUSCHENKOV, OLEG;MANDELMAN, JACK, A.