MANUFACTURING METHOD FOR THIN FILM OF POLY-CRYSTALLINE SILICON

摘要

PURPOSE: A method for manufacturing a polycrystalline silicon thin film is provided to effectively manufacture the polycrystalline silicon thin film by precisely controlling amount of metallic catalyst performing as a nucleus of silicon crystallization. CONSTITUTION: An insulating layer is formed on a substrate(S1). A first metal layer is formed on the insulating layer(S2). A first metal oxide layer is formed on the first metal layer(S3). A second metal layer is formed on the first metal oxide layer(S4). A second metal oxide layer is formed on the second metal layer(S5). A silicon layer is formed on the second metal oxide layer(S7). A barrier layer is formed on the silicon layer(S8). Crystalline silicon is created by treating the silicon layer by using heat(S9). The barrier layer is eliminated(S10).