| 摘要 |
An MOS field effect transistor comprising an N-type semiconductor substrate having a P type diffused region formed therein which is more shallow than a P type source and a P type drain diffused regions, the shallow diffused region being connected to a gate electrode by a conductive means, and utilizing the breakdown phenomenon of a PN junction formed between the shallow diffused region and the substrate thereby to prevent the breakdown of an insulating layer under the gate electrode. |
