| 摘要 |
An exposure apparatus includes a projection optical system, which projects a pattern of a mask onto a prescribed exposure area on a substrate at a prescribed projection magnification. The optical axis center of the projection optical system is set to a position different from that of the center of the projection area onto which the pattern is projected. The exposure apparatus further includes a magnification modification device, which modifies the projection magnification of the projection optical system; a calculation device, which calculates a shift length of the center of the projection area associated with modification of the projection magnification; and a correction device, which corrects the position information of the exposure area based on the shift length of the center of the projection area. |
